Pendeo-epitaxy of GaN on SOI nano-pillars: Freestanding and relaxed GaN platelets on silicon with a reduced dislocation density
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چکیده
منابع مشابه
Patterned growth of InGaN/GaN quantum wells on freestanding GaN grating by molecular beam epitaxy
We report here the epitaxial growth of InGaN/GaN quantum wells on freestanding GaN gratings by molecular beam epitaxy (MBE). Various GaN gratings are defined by electron beam lithography and realized on GaN-on-silicon substrate by fast atom beam etching. Silicon substrate beneath GaN grating region is removed from the backside to form freestanding GaN gratings, and the patterned growth is subse...
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M-plane GaN avalanche p-i-n photodiodes on low dislocation density freestanding m-plane GaN substrates were realized using metal-organic chemical vapor deposition. High quality homoepitaxial m-plane GaN layers were developed; the root-mean-square surface roughness was less than 1 Å and the full-width-at-half-maximum value of the x-ray rocking curve for 101̄0 diffraction of m-plane GaN epilayer w...
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a Department of Materials Science and Engineering, National Chiao Tung University, 1001 Ta Hsueh Rd., 30010 Hsinchu, Taiwan b Department of Electronics Engineering, National Chiao Tung University, 1001 Ta Hsueh Rd., 30010 Hsinchu, Taiwan c Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, VA 24061, USA d Department of Electrophysics, National Chiao Tung University, 1...
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ژورنال
عنوان ژورنال: Journal of Crystal Growth
سال: 2019
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2019.125235